As of July, 2008
ET-080804
Under development
New product
GH04125A2A
Blue violet Laser Diode
High Power
B
lue violet Laser Diode
ěUnitдmmè
Outline Dimensions
Features
(1) Wavelength :
406
nm(Typ.)
(2) Optical
power out
put
:
CW
125
mW
(3) 包5.6mm
CAN package
[ Terminal connection ]
倍1.0MIN.
倍3.55ɑ0.1
倍4.4MAX.
倍5.6+0
-0.025
0.
2
5
ɑ
0
.
0
3
0.5MIN.
Z
reference plane
1
.
67ɑ
0
.
08
2.7
ɑ
0.5
0.5
M
AX.
6.
0
.
5
1.
0
.
1
錾, 鏊
倍1.2MAX.
C
0.
1MAX.
0.
6M
I
N
.
0.1
M
A
3-倍0.45ɑ0.1
0.4ɑ0.1
0.4
ɑ
0.1
倍2
0
.
15
90ㄌɑ2
X
Y
emission
point
Applications
(1)
40
6nm
b
and
li
ght source
(2) Laser sensor
(3) other application
Absolute Maximum Ratings
(Tc=25ㄏㄧ1)
Parameter
Symbol
Ratings
unit
ㄧ2
Optical
po
wer
o
utput(CW)
Po
150
mW
Reverse voltage
Laser
Vrl
2V
Photo diode
Vrd
30
V
Operatings
t
emperature(case temp.)
Topc(c)
-10э+70
Storage temperature
Tstg
-40э+85
ㄧ3
Soldering
te
mperature
Tsld
350
ㄧ1
Tc
: C
ase
t
emperature
ㄧ2
CW
:
Continuous
W
ave
O
peration
ㄧ3
Soldering
po
sition is
1.6m
m
apar
t from
b
ottom
e
dge
o
f
the
cas
e.
(Immersion time:
3s
)
Stem
Photo diode
Laser diode
ěNoticeè
fIn the absence of
confirmation by device specification sheets. SHARP takes no responsibility
for any
de
fects that may
occur in
equipment
using any
SHAR
P devices shown in catalogs,
data books,
etc.
Contact SHAR
P in order
to
obtain the latest device
speci
fication sheets
b
efore
using any
SHAR
P device.
fSpecifications are
subject to cha
nge
without notice f
or
i
mprovement.
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